DETERMINATION OF TRACE AMOUNTS OF GERMANIUM IN CDSPELOSI C; ATTOLINI G.1979; MIKROCHIM. ACTA; AUT; DA. 1979; VOL. 1; NO 3-4; PP. 199-205; ABS. GER; BIBL. 10 REF.Article

INTERFACE KINETICS AND THE VAPOUR PHASE MASS TRANSPORT IN CLOSED TUBE CDS:I₂-SYSTEMPAORICI C; ATTOLINI G.1979; KRISTALL U. TECH.; DDR; DA. 1979; VOL. 14; NO 6; PP. 645-651; ABS. GER; BIBL. 11 REF.Article

IODINE DETECTION IN IODINE-DOPED CDS SINGLE CRYSTALS.PAORICI C; PELOSI C; ATTOLINI G et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 37; NO 1; PP. 9-12; BIBL. 16 REF.Article

COULO-BIPOTENTIOMETRIC TITRATION IN THE ANALYSIS OF BROMINE IN BROMINE-DOPED CADMIUM CHALCOGENIDESPAORICI C; PELOSI C; ATTOLINI G et al.1975; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; NETHERL.; DA. 1975; VOL. 61; NO 2; PP. 213-217; BIBL. 9 REF.Article

EQUILIBRIUM CALCULATIONS FOR VPE-INGAASPFRANCHI S; PELOSI C; ATTOLINI G et al.1981; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1981; VOL. 16; NO 1; PP. 1-4; ABS. ENG; BIBL. 26 REF.Article

Solutions compactes pour les poids lourds = Compact solutions for the heavy trucksBARBERO, S; ATTOLINI, G.Evolution (Ed. française). 1996, Num 3, pp 19-21, issn 1104-8190Article

Hardening effect in Zn-doped cadmium sulphide crystalsATTOLINI, G; PAORICI, C.Journal of crystal growth. 1987, Vol 82, Num 3, pp 356-360, issn 0022-0248Article

CLOSED-TUBE CHEMICAL-TRANSPORT MECHANISMS IN THE CE:TE:H:CL:N SYSTEM.PAORICI C; PELOSI C; ATTOLINI G et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 3; PP. 348-364; BIBL. 17 REF.Article

Design guidelines for thermo-photo-voltaic generator: The critical role of the emitter sizeATTOLINI, G; BOSI, M; FERRARI, C et al.Applied energy. 2013, Vol 103, pp 618-626, issn 0306-2619, 9 p.Article

Skeletal and hollow crystals of cadmium sulphide grown under time-increasing supersaturationATTOLINI, G; PAORICI, C; RAMASAMY, P et al.Journal of crystal growth. 1986, Vol 78, Num 1, pp 181-184, issn 0022-0248Article

Lattice strain relaxation in GaAs/InP(001) and GaAs/GaP(001) heterostructuresFRANCESIO, L; FRANZOSI, P; ATTOLINI, G et al.Solid state communications. 1996, Vol 97, Num 9, pp 781-783, issn 0038-1098Article

Electron beam induced current and cathodoluminescence study of the recombination activity of stacking faults and hillocks in hydride vapor phase epitaxy InPATTOLINI, G; FRIGERI, C; PELOSI, C et al.Applied physics letters. 1986, Vol 49, Num 3, pp 167-169, issn 0003-6951Article

Interface-kinetical limitations in closed-tube chemical vapour transport (II). The CdTe:NH₄Cl growth systemPAORICI, C; PESSINA, V; ZECCHINA, L et al.Crystal research and technology (1979). 1986, Vol 21, Num 10, pp 1265-1267, issn 0232-1300Article

Productivity function for multireactional CVT and its application to iodine transport of cadmium sulphideATTOLINI, G; PAORICI, C; ZECCHINA, L et al.Journal of crystal growth. 1990, Vol 99, Num 1-4, pp 731-736, issn 0022-0248, 6 p., 2Conference Paper

Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxyFRIGERI, C; GLEICHMANN, R; PELOSI, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 10, Num 3, pp 197-207Article

Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPEFRIGERI, C; ATTOLINI, G; PELOSI, C et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 56-60, issn 0031-8965, 5 p.Conference Paper

Synthesis and characterization of the layered compounds in the ZnIn₂S₄-ZnIn₂Se₄ systemRAZZETTI, C; ATTOLINI, G; BINI, S et al.Physica status solidi. B. Basic research. 1992, Vol 173, Num 2, pp 525-531, issn 0370-1972Article

AFM morphological characterization and Raman study of germanium grown on (111)GaAsATTOLINI, G; BOSI, M; CALICCHIO, M et al.Surface science. 2012, Vol 606, Num 9-10, pp 808-812, issn 0039-6028, 5 p.Article

Crystal growth and characterization of layered semimagnetic semiconductor compounds Cd_1-yMn_yIn_2-2xGa_2xS₄ATTOLINI, G; SAGREDO, V.Materials chemistry and physics. 2000, Vol 66, Num 2-3, pp 274-277, issn 0254-0584Conference Paper

ISOVPE growth, post-growth annealing and characterization of Hg_1-xCd_xTe layersATTOLINI, G; DE MELO, O; LECCABUE, F et al.Materials letters (General ed.). 1989, Vol 8, Num 8, pp 313-317, issn 0167-577XArticle

Raman scattering of strained GaAs layers grown by MOVPE on InP (111) A and BGENNARI, S; LOTTICI, P. P; ATTOLINI, G et al.Solid state communications. 1994, Vol 90, Num 5, pp 291-294, issn 0038-1098Article

Electro-optical properties of InGaAs layers grown by hydride vapour phase epitaxyATTOLINI, G; BOCCHI, C; FORNARI, R et al.Crystal research and technology (1979). 1990, Vol 25, Num 1, pp 25-30, issn 0232-1300, 6 p.Article

Thermodynamic analysis of urea physical vapour transportPAORICI, C; ZHA, M; ZANOTTI, L et al.Crystal research and technology (1979). 1995, Vol 30, Num 5, pp 667-675, issn 0232-1300Article

Synthesis and characterization of 3C-SiC nanowiresATTOLINI, G; ROSSI, F; BOSI, M et al.Journal of non-crystalline solids. 2008, Vol 354, Num 47-51, pp 5227-5229, issn 0022-3093, 3 p.Article

Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivityFRIGERI, C; ATTOLINI, G; BOSI, M et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S303-S306, SUP1Conference Paper